| PART |
Description |
Maker |
| RFP-20N50TPC |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| PTN |
Wraparound Chip Resistors Thin Film Tantalum Nitride
|
Vishay
|
| MFE211 MFE212 |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
| RFP-050100-2X50-2 |
Chip Terminations
|
Anaren Microwave
|
| RFP-100-50TW |
Flanged Terminations
|
Anaren Microwave
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| CHF3020CBF500L |
Power RF Terminations / Resistors
|
Bourns Electronic Solutions
|
